View T1020W_305783.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

(R)
T1020W T1030W
SNUBBERLESS TRIAC
FEATURES ITRMS = 10 A VDRM = VRRM = 400V to 800V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734 DESCRIPTION The T1020/1030W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current (Tj initial = 25C ) Parameter Tc= 90C tp = 16.7 ms (1 cycle, 60 Hz) tp = 10 ms (1/2 cycle, 50 Hz) I2 t dI/dt I2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/s. tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5 mm from case Parameter 400 VDRM VRRM
November 1996
A2
A1
G
A1 A2 G
ISOWATT220AB (Plastic)
Value 10 110 125 78 20 100 - 40 to + 150 - 40 to + 125 260
Unit A A
A2s A/s
C C
Symbol
T1020 / 1030-xxxW 600 600 700 700 800 800
Unit
Repetitive peak off-state voltage Tj = 125C
400
V
1/5
T1020W / 1030W
THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for A.C (360 conduction angle) Parameter Value 50 3.0 Unit C/W C/W
GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 s) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33 VD=12V (DC) RL=33 VD=VDRM RL=3.3k VD=VDRM IG = 500mA dlG/dt= 3As IT= 100mA Gate open Tj= 25C Tj= 25C Tj= 125C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 125C Linear slope up to Gate open VD=67%VDRM (dI/dt)c = 5.3 A/ms Tj= 125C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP MAX MAX MAX MAX MIN MIN 200 10 35 1.5 10 2 300 20 T1020 20 1.5 0.2 2 50 V A mA V/s V/s T1030 30 Unit mA V V s IGM = 4 A (tp = 20 s)
ITM= 14A tp= 380s VDRM rated VRRM rated
(see note) Tj= 125C
* For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/s, and, therefore, it is unnecessary to use a snuber R-C network accross T1020W / T1030W triacs.
2/5
(R)
T1020W / 1030W
Fig.1 : Maximum power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact.
P (W)
180 O
P(W)
14 12 10
Tcase (o C) Rth = 0 o C/W 2.5 o C/W o 5 C/W 7 o C/W
= 180 = 120 = 90
o o
o
14 12 10 8
-85
-95
8 6 4 2 0 0 1
= 60 = 30
o
o
-105 6 4 -115
Tamb (oC)
10 20 30 40 50 60 70 80 90 100 110 120 130
I T(RMS) (A)
2 3 4 5 6 7 8 9 10
2 0
0
-125
Fig.3 : RMS on-state current versus case temperature.
Fig.4 : Thermal transient impedance junction to case and junction to ambient versus pulse duration.
Zth/Rth 1
Zth (j-c)
12 10 8 6 4 2 0
I T(RMS) (A)
= 180
o
0.1
Zt h( j-a)
0.01
Tcase( C)
0 10 20 30 40 50 60 70 80 90 100 110 120 130
1E-3 1E-2 1E-1 1E +0 1E +1
o
tp (s)
1 E+2 5 E +2
Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature.
Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C]
Fig.6 : Non repetitive surge peak on-state current versus number of cycles.
ITSM(A)
120 100 80 60
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt
Tj initial = 25 C
o
Ih
40 20
Tj(oC)
Number of cycles
-40
-20
0
20
40
60
80
100
120 140
0
1
10
100
1000
3/5
(R)
T1020W / 1030W
Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t.
I TSM (A). I2 t (A 2 s)
Fig.8 : On-state characteristics (maximum values).
I TM (A)
Tj initial = 25oC
1000
1000
I TSM
100
It
2
100
Tj initial o 25 C
10
10
Tj max
Tj max Vto =0.9V Rt =0.038
tp(ms)
VTM (V)
1 1
10
1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
4/5
(R)
T1020W / 1030W
PACKAGE MECHANICAL DATA ISOWATT220AB REF.
A B B1 C D E H I J L M N N1 O P
DIMENSIONS Millimeters Inches Min.
10 15.9 9.8 28.6 16 typ 9 4.4 3 2.5 0.4 2.5 4.95 2.4 1.15 0.75 9.3 4.6 3.2 2.7 0.7 2.75 5.2 2.7 1.7 1
Max.
10.4 16.4 10.6 30.6
Min.
0.393 0.626 0.385 1.126 0.630 0.354 0.173 0.118 0.098 0.015 0.098 0.195 0.094 0.045 0.030
Max.
0.409 0.645 0.417 1.204 typ 0.366 0.181 0.126 0.106 0.027 0.108 0.204 0.106 0.067 0.039
Cooling method : C Marking : Type number Weight : 2.1g Recommended torque value : 0.55 m.N. Maximum torque value : 0.70 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
(c) 1996 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
(R)

▲Up To Search▲

Price & Availability of T1020W

	To Download T1020W Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .